规格：阈值电压 Vgs 1V,
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 200 mA, 20 V, 0.29 ohm, 4.5 V, 1 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 740 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 740 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 30 V, 0.185 ohm, 4.5 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 4.8 A, 30 V, 0.019 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 400 mA, 20 V, 0.65 ohm, 4.5 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
(EN)
VISHAY
Dual MOSFET, N and P Channel, 1.28 A, 20 V, 0.22 ohm, 4.5 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双路, N和P沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.9 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 8A, TSOP, 整卷
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.085 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, 双N&P沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 12.1 A, 30 V, 0.0115 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14.1 A, 20 V, 0.0077 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 整卷
(EN)
INTERNATIONAL RECTIFIER
场效应管, N通道, MOSFET, 30V, 12.5A, SOIC
(EN)VISHAY
场效应管, MOSFET, N通道, 12V, 50A, SOIC, 整卷
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4.9 A, 30 V, 0.044 ohm, 10 V, 1 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 38 A, 30 V, 2.4 mohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 25V, 40A, SOIC-8, 整卷
(EN)
