规格：阈值电压 Vgs 1V,
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0024 ohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 29 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 238 mA, 20 V, 1.5 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, 双N沟道, 20V, SOT-963
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0037 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 50 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 361 mA, 20 V, 0.5 ohm, 4.5 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 0.017 ohm, 4.5 V, 1 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.5 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 20 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.5 A, 30 V, 0.022 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
(EN)
