规格：阈值电压 Vgs 1V,
VISHAY
双路场效应管, MOSFET, N和P沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 20 V, 0.003 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双路N沟道, 30V, 250UΩ, 750mA, SC-70-6
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.07 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 7.2 A, 40 V, 50 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.012 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.011 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 46 A, 20 V, 0.00155 ohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
VISHAY
NPN/PNP MOSFET, 60V, SOIC
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)VISHAY
MOSFET, N CHANNEL, 20V, 0.00155OHM, 46A, SOIC-8
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 7A, SOICSIS
(EN)
VISHAY
晶体管, 双路, N/P通道, 场效应管, MOSFET, 30V, TSOP
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.085 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 21.5 A, 12 V, 0.0042 ohm, 4.5 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 19.3A, SOIC-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 230 mA, 20 V, 1.8 ohm, 4.5 V, 1 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 4.9 A, 30 V, 0.044 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 80V, 39A, DPAK
(EN)
