规格：阈值电压 Vgs 1V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.7 A, 60 V, 0.042 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 30 V, 10 mohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 30 V, 120 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6.3 A, 20 V, 0.016 ohm, 4.5 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 16 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 100 mohm, 4.5 V, 1 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0046 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 55 V, 11 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.24 ohm, 4.5 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 6.7 mohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 100 mohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 50 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4.6 A, 30 V, 47 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 30 V, 3.5 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.7 A, 20 V, 68 mohm, 1 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 21A, SOIC
(EN)
