规格：阈值电压 Vgs -1V,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.5Ω, -350mA, SC-89-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.031 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -75 A, -30 V, 5.5 mohm, -10 V, -1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 9 A, -20 V, 18 mohm, -4.5 V, -1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.05 ohm, -10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -600 mA, -20 V, 0.7 ohm, -4.5 V, -1 V
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.4 A, -30 V, 0.014 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -20 A, -55 V, 0.093 ohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 150 mA, -20 V, 8 ohm, -4.5 V, -1 V
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -60A, POWERPAK SO-8
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 10.4 A, -60 V, 55 mohm, -10 V, -1 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, 3.4 A, -55 V, 105 mohm, -10 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 53 A, -60 V, 19.5 mohm, -10 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.1 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -1 V
(EN)
