规格：阈值电压 Vgs -1V,
VISHAY
场效应管, MOSFET, P沟道, 8-SOIC
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -12V, 4.1A TO-236, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -60A, POWERPAK SO-8, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -16.7A, MICRO FOOT
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -2.3 A, -30 V, 0.165 ohm, -10 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -8 V, 42 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.026Ω, 5.8A, SUPERSOT-6
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -20V, 7.4A
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -35A, POWERPAK 1212-8
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, 200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -12 V, 0.044 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.22 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -1.3 A, -12 V, 0.19 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)ROHM
双路场效应管, MOSFET, 双P沟道, -1.3 A, -12 V, 0.19 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -1.3 A, -12 V, 0.19 ohm, -4.5 V, -1 V
(EN)VISHAY
场效应管, MOSFET, 双P沟道, -20V, 7.4A
(EN)
