规格：阈值电压 Vgs -1V,
VISHAY
MOSFET, P CHANNEL, -40V, -18A, POWERPAK 1212-8
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, -1.6A, SOT-23-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -460 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -6.9 A, -20 V, 0.02 ohm, -4.5 V, -1 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V
(EN)
VISHAY
MOSFET, DUAL P CHANNEL, -20V, 0.0275OHM, -8A, SOIC-8
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -22 A, -20 V, 0.0049 ohm, -4.5 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, P沟道, 1.6 A, -30 V, 210 mohm, 10 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.03 ohm, -4.5 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -20 V, 0.0265 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, -2.4A, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.1 A, -20 V, 0.07 ohm, -4.5 V, -1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.083 ohm, -4.5 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -3.1 A, -30 V, 0.097 ohm, -4.5 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -3.1 A, -40 V, 0.09 ohm, -10 V, -1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.02 ohm, -10 V, -1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.05 ohm, -10 V, -1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -1 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.105 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.02 ohm, -10 V, -1 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.22 ohm, -10 V, -1 V
(EN)
