规格：阈值电压 Vgs 4.5V,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 42 A, 600 V, 0.185 ohm, 10 V, 4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 19 A, 650 V, 0.14 ohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 800 V, 420 mohm, 10 V, 4.5 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 430 mA, 8 V, 0.5 ohm, 4.5 V, 4.5 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 700 mA, 450 V, 9.3 ohm, 10 V, 4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 3.6ATO-262
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 15 A, 800 V, 600 mohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, HiPerFET, N沟道, 20 A, 1.2 kV, 750 mohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 150V, 6A, D-PAK
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 500V, 4.7A, IPAK
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 7.5A, 500V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 165 mohm, 4.5 V, 4.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 0.041Ω, 4A
(EN)
VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 4.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 600 V, 2.7 ohm, 10 V, 4.5 V
(EN)
