规格：阈值电压 Vgs 4V,
VISHAY
晶体管, MOSFET, N沟道, 90 A, 200 V, 0.0138 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.8 A, 600 V, 0.207 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.9 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.067 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 20A, TO-220FP
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2.5 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 72 A, 100 V, 3.7 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 2.6A, POWERPAK
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 57A, TO-220AB
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 47A, TO247AC-3
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 110A, D2-PAK
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 43.3 A, 700 V, 0.072 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 0.35 ohm, 4 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0033 ohm, 10 V, 4 V
(EN)
