规格：阈值电压 Vgs 4V,
STMICROELECTRONICS
Power MOSFET, N Channel, 66 A, 600 V, 0.037 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 46 A, 200 V, 0.055 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, TO-220AB
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 150 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 400 V, 300 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.05 ohm, 10 V, 4 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 75V, 130A, TO-220AB
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 500 mA, 500 V, 18 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 290 A, 100 V, 2 mohm, 20 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 70 A, 60 V, 14 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 60 V, 32 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 70 A, 150 V, 0.023 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.4 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 7.8 mohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
