规格：阈值电压 Vgs 4V,
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 2.8 A, -100 V, 1.2 ohm, -10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 20 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 24.5 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0067 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 22 A, 500 V, 230 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 350 A, 75 V, 0.00146 ohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 600 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 53A TO-220AB
(EN)INFINEON
晶体管, MOSFET, N沟道, 190 A, 40 V, 3.7 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 650 V, 400 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 140W, TO-262
(EN)
