规格：阈值电压 Vgs 4V,
INFINEON
晶体管, MOSFET, N沟道, 21 A, 100 V, 28.5 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 30 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 100 V, 22 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 600 V, 0.19 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 1.5 kV, 1.8 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, D2-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 250 V, 0.0363 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.8 A, 200 V, 180 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 550 V, 350 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 36 A, 500 V, 130 mohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 4.7 A, 900 V, 2.5 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 74 A, -55 V, 20 mohm, 20 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 69 A, 55 V, 0.011 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 58 A, 650 V, 0.037 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 7.7A, IPAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V
(EN)
