规格：阈值电压 Vgs 4V,
INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 24 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 60 V, 40 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0065 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 3.7 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 68 A, 55 V, 0.011 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 0.115 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 14 A, 600 V, 0.18 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0043 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 400 V, 300 mohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 580 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 400 V, 200 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 500 V, 120 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.8 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 280 A, 40 V, 0.0018 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 75V, 82A TO-220AB
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 100 V, 52 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 1KV, 3.1A, TO-247
(EN)
