规格：阈值电压 Vgs 4V,
INFINEON
晶体管, MOSFET, N沟道, 89 A, 75 V, 9.4 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 180 A, 100 V, 8 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率MOSFET, N沟道 60V 30A
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 17 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 150W, TO-262
(EN)
VISHAY
场效应管, N通道, MOSFET, 250V, 8.1A TO-220
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 75 V, 0.0025 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0037 ohm, 20 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0025 ohm, 15 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 15 A, 500 V, 330 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 58 A, 200 V, 40 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.07 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 3.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 60 V, 7.1 mohm, 20 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.25 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 3 A, 150 V, 0.068 ohm, 10 V, 4 V
(EN)
