规格：阈值电压 Vgs 4V,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.7 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 85A TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 通用, N沟道, 75 A, 55 V, 7 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 14 A, 1.2 kV, 0.28 ohm, 18 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 90 A, 40 V, 3.3 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, 通用, N沟道, 49 A, 55 V, 20 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO220AB-3
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 62 A, 33 V, 12.5 mohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 650 V, 0.171 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0049 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 1.7 A, 600 V, 2.8 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 9 A, 1.5 kV, 2.2 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 150 V, 33 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 26 A, 500 V, 200 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 0.0082 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
