规格：阈值电压 Vgs 4V,
VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 900V, 4.7A TO-247
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 84 A, 650 V, 0.024 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 640 mA, 100 V, 1 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 150 A, 55 V, 4.9 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 600 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 82 A, 75 V, 13 mohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 5.5 A, 600 V, 750 mohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 29 A, 650 V, 0.12 ohm, 18 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V
(EN)
