规格：阈值电压 Vgs 4V,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 200 V, 10 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8.3 A, 600 V, 0.19 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 350 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 230 A, 100 V, 6 mohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.11 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 25 A, 800 V, 150 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.26 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 10V, 18A TO-204AE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 89 A, 75 V, 9.4 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.68 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 500 V, 50 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 140 A, 100 V, 0.008 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 300 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 75 V, 7.34 mohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.038 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.6 A, 200 V, 0.1 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
芯片, MOSFET增强型高速开关, 125W, 18A
(EN)
