规格：阈值电压 Vgs 4V,
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 7.2 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 75A, TO-247
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 180A, TO-220AB
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 500 V, 850 mohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 2.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 55 V, 2.6 mohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 50 A, 600 V, 0.052 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 300 V, 22 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.0056 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 80A, TO-263AB, 整卷
(EN)
INFINEON
场效应管, MOSFET, N沟道, 500V, 12A, TO-204AA
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 150 V, 0.101 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 55 V, 45 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 3.3 mohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 100V, 110A TO-263
(EN)
VISHAY
场效应管, MOSFET, N沟道, 250V, 3.8A, SOIC
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 55 A, 40 V, 0.0055 ohm, 10 V, 4 V
(EN)
