规格：阈值电压 Vgs 4V,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 73 A, 300 V, 45 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 350 A, 40 V, 0.00135 ohm, 20 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00168 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 13.9 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 200 A, 70 V, 6 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 169A, TO-220AB
(EN)
INFINEON
场效应管, MOSFET, N沟道, 400V, 14A, TO-204AA
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 42 mohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 1KV, 3.1A, TO-220
(EN)
NTE ELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, 4 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 500 mA, 500 V, 18 ohm, 10 V, 4 V
(EN)MICROSEMI
场效应管, MOSFET, N沟道, 500V, 15A, TO-220
(EN)
