规格：阈值电压 Vgs 2V,
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 120 V, 13 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 7340 μohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00121 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 0.042 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0218 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 104A, D2-PAK
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 90 A, 250 V, 33 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.1 A, 30 V, 0.0207 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 30 V, 80 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 40 V, 0.0054 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 7 A, 60 V, 0.033 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 25 V, 0.008 ohm, 4.5 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 106 A, 75 V, 0.0059 ohm, 10 V, 2 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 60V V(BR)DSS
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 30 V, 117 mohm, 10 V, 2 V
(EN)
