规格：阈值电压 Vgs 2V,
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0058 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 600V, 0.081Ω, 36A, TO-263-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0046 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1800 μohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.0111 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.028 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 75 V, 0.00734 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 84 A, 30 V, 0.0053 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, SOT-223, SMD, 1.5A, 100V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0035 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET晶体管, 整卷
(EN)INFINEON
场效应管, MOSFET晶体管, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 240mA TO-236, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 9.5 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, 双N&P沟道
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0025 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 34.4 A, 200 V, 0.0285 ohm, 10 V, 2 V
(EN)
