规格：阈值电压 Vgs 2V,
INFINEON
晶体管, MOSFET, N沟道, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V
NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 17A, IPAK
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-263-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.118 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00125 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 35V, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0071 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 2A, TO-252-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 15 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.8 A, 100 V, 51 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 370 A, 40 V, 0.00052 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 370 A, 40 V, 0.00052 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 287 A, 60 V, 0.00093 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 287 A, 60 V, 0.00093 ohm, 10 V, 2 V
(EN)
