规格：阈值电压 Vgs 2V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0043 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 24 V, 0.0012 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 60 V, 0.01 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 0.068Ω, 2.7A
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 2Ω, 300mA, TO-236
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 30A, TO-204AE
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 475 mA, 60 V, 0.78 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, 5 A, -60 V, 170 mohm, -10 V, 2 V
(EN)TOSHIBA
晶体管, MOSFET, P沟道, 5 A, -60 V, 170 mohm, -10 V, 2 V
(EN)
ADVANCED POWER ELECTRONICS CORP
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 5 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 车用, 24V, 240A, TO-262
(EN)
