规格：阈值电压 Vgs 2V,
INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, 2 V
(EN)
NXP
晶体管, MOSFET, 开关, N沟道, 50 mA, 10 V, 45 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.003 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.005 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0054 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0018 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0033 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 6.2 mohm, 4.5 V, 2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 6.2 mohm, 4.5 V, 2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 25 V, 0.008 ohm, 4.5 V, 2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 25 V, 0.008 ohm, 4.5 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 0.081 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.8 A, 600 V, 0.255 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.244 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0071 ohm, 10 V, 2 V
(EN)
