规格：阈值电压 Vgs 800mV,
VISHAY
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.023 ohm, 10 V, 800 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 12 A, 30 V, 0.0135 ohm, 10 V, 800 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 8 V, 0.015 ohm, 4.5 V, 800 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.5 A, 8 V, 0.09 ohm, 4.5 V, 800 mV
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV
(EN)
