INFINEON

晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V

GENESIC SEMICONDUCTOR

场效应管, JFET/SIC二极管合成包, 1.2KV, SOT-227

MICROCHIP

晶体管, MOSFET, N沟道, 360 mA, 90 V, 3.2 ohm, 0 V

GENESIC SEMICONDUCTOR

碳化硅结晶体管, 1.2KV, 50A, TO-247AB

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V

GENESIC SEMICONDUCTOR

碳化硅结晶体管, 1.2KV, 5A, TO-263

MICROCHIP

芯片, 场效应管, MOSFET, 耗尽模式, 350V, 35Ω, 3-SOT-23, T/R

GENESIC SEMICONDUCTOR

碳化硅结晶体管, 1.2KV, 5A, TO-247AB

VISHAY

晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V

MICROCHIP

场效应管, MOSFET, N沟道, 650V, 0.3A, TO-252AA-3

GENESIC SEMICONDUCTOR

碳化硅结晶体管, 1.2KV, 10A, TO-247AB

INFINEON

场效应管, MOSFET, N沟道, 17.2A, 30V

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 6 A, 35 V, 0.03 ohm, 10 V

RENESAS

晶体管, MOSFET, N沟道, 25 A, 100 V, 11 mohm, 10 V

INFINEON

场效应管, MOSFET, N沟道, 8.3A, 100V SOIC-8

VISHAY

晶体管, MOSFET, P沟道, -16.3 A, -100 V, 0.115 ohm, -10 V

MICROCHIP

晶体管, MOSFET, N沟道, 230 mA, 500 V, 7 ohm, 0 V

MICROCHIP

MOSFET, N CHANNEL, 450V, 0.1A, TO-243AA-3

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V

VISHAY

晶体管, MOSFET, N沟道, 40 A, 60 V, 0.007 ohm, 10 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 3.5 A, 60 V, 0.092 ohm, 10 V

DIODES INC.

双路场效应管, MOSFET, 双N沟道, 180 mA, 60 V, 6 ohm, 10 V, 2 V

DIODES INC.

双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 1 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -100 A, -75 V, 0.0062 ohm, -10 V

ROHM

晶体管, MOSFET, P沟道, -2 A, -30 V, 900 mohm, -10 V