规格：阈值电压 Vgs 1.2V,
VISHAY
晶体管, MOSFET, N沟道, 30 A, 40 V, 8.5 mohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 700mA, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 50A, POWERPAK8
(EN)
VISHAY
MOSFET, N CHANNEL, 40V, 50A, POWERPAK SO-8
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 9.6 A, 30 V, 0.014 ohm, 4.5 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 2W, 6-TSOP
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 6.3A, TSOP6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0049Ω, 15A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.0045 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 24 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.011OHM, 40A, TO-252AA-3
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-323-3
(EN)
INFINEON
晶体管, 双路, N通道, 场效应管, MOSFET, 20V, 微型8, 整卷
(EN)INFINEON
场效应管, N通道, MOSFET, 20V, 6.5A, MICRO-6, 整卷
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 250 mA, 30 V, 1 ohm, 4.5 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0046 ohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0053 ohm, 10 V, 1.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
