规格：阈值电压 Vgs -1.7V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -130 mA, -50 V, 1.2 ohm, -5 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0082 ohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 120 mA, -60 V, 10 ohm, -10 V, -1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.3 A, -30 V, 0.042 ohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -49 A, -30 V, 0.0027 ohm, -10 V, -1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1.5 A, -40 V, 0.18 ohm, -10 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0036 ohm, -10 V, -1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 180 mA, -60 V, 5 ohm, -10 V, -1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 14 mohm, -10 V, -1.7 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, 100 mA, -30 V, 12 ohm, -4 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0026 ohm, -10 V, -1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 900 mA, -30 V, 0.25 ohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.0027OHM, -49A, POWER 56-8
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -7.3 A, -30 V, 0.013 ohm, -20 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0029 ohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5.3A, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -180 A, -40 V, 0.0018 ohm, -10 V, -1.7 V
(EN)
MULTICOMP
场效应管, MOSFET, P沟道, -50V, 1.2Ω, -130mA, SOT-23-3
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -130 mA, -50 V, 1.2 ohm, -5 V, -1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 50 mohm, -10 V, -1.7 V
(EN)MULTICOMP
场效应管, MOSFET, P沟道, -50V, 1.2Ω, -130mA, SOT-23-3
(EN)
