规格：在电阻RDS（上） 100Mohm,
TOSHIBA
晶体管, MOSFET, N沟道, 5 A, 60 V, 100 mohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, P通道, MOSFET, -55V, 19A, TO-262
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 100 mohm, 10 V, 4.9 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 45 A, 550 V, 100 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 200V, 24A, TO-220AB
(EN)INFINEON
晶体管, MOSFET, P沟道, 19 A, -55 V, 100 mohm, -10 V, -4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 100 mohm, -10 V, -1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 70 V, 100 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 100 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 5 A, -30 V, 100 mohm, 10 V, -1.75 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 100 mohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 53 A, 500 V, 100 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -15 A, -60 V, 100 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223, 整卷
(EN)
INFINEON
场效应管, MOSFET, N沟道, 1.7W, 6-TSOP
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -2.4A, SOT-23, 整卷
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.6 A, 30 V, 100 mohm, 10 V, 1.7 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -2.7 A, -20 V, 100 mohm, -4.5 V, -890 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -60V, -15A, TO-252, 整卷
(EN)
