规格：在电阻RDS（上） 180mohm,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 200 V, 180 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.7 A, 100 V, 180 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, TO-220, 18A, 200V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 5 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -10 A, -60 V, 0.18 ohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.8 A, 200 V, 180 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 31 A, 500 V, 180 mohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 18A, D2-PAK
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 3.2 A, 60 V, 180 mohm, 10 V, 1 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 200V, 18A, TO-220
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 150 V, 180 mohm, 10 V, 5.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 10V, 18A TO-204AE
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 200 V, 180 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -1.3A, SuperSOT, 整卷
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 14A, TO-204AA
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 8A TO-205AF
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8 A, 100 V, 180 mohm, 10 V, 4 V
(EN)
