规格：在电阻RDS（上） 0.0032ohm,
INFINEON
晶体管, MOSFET, N沟道, 98 A, 34 V, 0.0032 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 81 A, 20 V, 0.0032 ohm, 10 V, 2.45 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.0032 ohm, 4.5 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0032 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.0032 ohm, 10 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0032 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 120 V, 0.0032 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0032 ohm, 10 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0032Ω, 160A, TO-252AA-3
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 0.0032OHM, 30.5A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0032 ohm, 4.5 V, 2.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 25A, POWERPAK SO-8
(EN)INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0032 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.0032 ohm, 10 V, 1.63 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0032 ohm, 10 V, 3.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 40 V, 0.0032 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0032 ohm, -10 V, -3 V
(EN)
