规格：在电阻RDS（上） 1ohm,
INFINEON
晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 400V, 3A TO-205AF
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 1 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 340 mA, 50 V, 1 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 530 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -530 mA, -150 V, 1 ohm, -10 V, -4.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 525 V, 1 ohm, 10 V, 3.75 V
(EN)
TAIWAN SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 1 ohm, 10 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 640 mA, 100 V, 1 ohm, 10 V, 4 V
(EN)
