规格：在电阻RDS（上） 2.2ohm,
INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 2.2 ohm, 10 V, 1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 260 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, 双N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2.2 ohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 9 A, 1.5 kV, 2.2 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 mA, 240 V, 2.2 ohm, 10 V, 1.65 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2.2 ohm, 10 V, 5.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 3.6ATO-262
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 260 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
