规格：在电阻RDS（上） 3ohm,
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 800V, 3A, TO-220
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 3 ohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)
SOLID STATE
晶体管, MOSFET, MOSPOWER, N沟道, 900 mA, 90 V, 3 ohm, 10 V, 1.5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 2.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, -1.9A, TO-252-3
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 240mA TO-236, 整卷
(EN)
INFINEON
晶体管, MOSFET, P沟道, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V
(EN)TOSHIBA
功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 3.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, 20W, D2-PAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 3 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 170 mA, 60 V, 3 ohm, 10 V, 1.6 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 100 mA, 20 V, 3 ohm, 4 V, 1.1 V
(EN)
