规格：在电阻RDS（上） 200Mohm,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 26 A, 500 V, 200 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 200 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 30 A, 500 V, 200 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.5 A, -30 V, 200 mohm, -10 V, -1.9 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.5 A, -60 V, 200 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 30 A, 500 V, 200 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 200 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -100V, 14A D2-PAK
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 8A, TO-220
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.7 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 200 mohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 2.4 A, -20 V, 200 mohm, -4.5 V, -700 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, 2.4 A, -20 V, 200 mohm, -4.5 V, -700 mV
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 30 A, 500 V, 200 mohm, 10 V, 2.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 30 A, 500 V, 200 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.95 A, -30 V, 200 mohm, -10 V, -3 V
(EN)
