规格：在电阻RDS（上） 240mohm,
INFINEON
晶体管, MOSFET, P沟道, 2.2 A, -150 V, 240 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 23.5 A, 600 V, 240 mohm, 10 V, 5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 36 A, 1 kV, 240 mohm, 10 V, 5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 2.2 A, -150 V, 240 mohm, -10 V, -3 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, LINEAR L2?, N沟道, 30 A, 600 V, 240 mohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 1.5 A, 30 V, 240 mohm, 4.5 V, 1.5 V
(EN)
