规格：在电阻RDS（上） 0.07ohm,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4.5 A, -12 V, 0.07 ohm, -1.8 V, -400 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 3.2A SOT-23
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 150 V, 0.07 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.07 ohm, -4.5 V, -0.72 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 47 A, 650 V, 70 mohm, 10 V, 3 V
(EN)ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2.5 A, -20 V, 0.07 ohm, -4.5 V, -2 V
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.07 ohm, 10 V, 1 V
(EN)
MICROCHIP
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.07 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 300V, 38A, TO-3PN
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.07 ohm, 10 V, 4 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.07 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 38 A, 300 V, 0.07 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
