规格：在电阻RDS（上） 480mohm,
INFINEON
晶体管, MOSFET, P沟道, -6.6 A, -100 V, 480 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 6.6A D-PAK
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 15 A, 500 V, 480 mohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 480 mohm, 10 V, 3.75 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 15 A, 500 V, 480 mohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 480 mohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -100V, 6.8A, D2-PAK
(EN)
VISHAY
晶体管, N沟道
(EN)
