规格：在电阻RDS（上） 32mohm,
VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -12 V, 32 mohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 55 V, 32 mohm, 10 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.032 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 60 A, 150 V, 32 mohm, 10 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 60 V, 32 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 35 A, 150 V, 32 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 150 V, 32 mohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -12V, 4.1A TO-236, 整卷
(EN)INFINEON
晶体管, MOSFET, N沟道, 35 A, 150 V, 32 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 65 A, 200 V, 32 mohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -12 V, 32 mohm, -4.5 V, -1 V
(EN)
