规格：在电阻RDS（上） 4ohm,
DIODES INC.
晶体管, MOSFET, P沟道, -280 mA, -60 V, 4 ohm, -10 V, -3.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 240V, 200mA, TO-236
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -190 mA, -60 V, 4 ohm, -4.5 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -190 mA, -60 V, 4 ohm, -4.5 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 320 mA, 100 V, 4 ohm, 10 V, 2.4 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, P沟道, -100 mA, -30 V, 4 ohm, -4 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 100 V, 4 ohm, 10 V, 2.4 V
(EN)VISHAY
场效应管, N通道, MOSFET, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, SuperSOT-6
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.2 A, 600 V, 4 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 600V, 2.4A, TO-220FP
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 400 mA, 500 V, 4 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 400 mA, 500 V, 4 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 25V, 220mA, SC-70, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)
RENESAS
晶体管, MOSFET, N沟道, 400 mA, 250 V, 4 ohm, 4 V
(EN)
