规格：在电阻RDS（上） 50Mohm,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 3.5A SOT-23
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 50 mohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 55V, SOIC
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 7.2 A, 40 V, 50 mohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.3 A, 20 V, 50 mohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.97 A, -20 V, 50 mohm, -4.5 V, -600 mV
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 7 A, 40 V, 50 mohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 50 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 30 V, 50 mohm, 16 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 50 mohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 30V, SOIC
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 80 V, 50 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 500 V, 50 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -20 V, 50 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 50 mohm, -10 V, -1.7 V
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 50 mohm, 10 V, 4 V
(EN)
