规格：在电阻RDS（上） 85mohm,
DIODES INC.
晶体管, MOSFET, P沟道, 8.2 A, -60 V, 85 mohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, SOIC
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 30A, TO-204AE
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 30A, TO-204AE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 85 mohm, 10 V, 1.7 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 8.2 A, -60 V, 85 mohm, -10 V, -1 V
(EN)
