规格：在电阻RDS（上） 0.012ohm,
VISHAY
晶体管, MOSFET, P沟道, -50 A, -60 V, 0.012 ohm, -10 V, -3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.012 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -60 V, 0.012 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 80 V, 0.012 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 9 A, 24 V, 0.012 ohm, 4.5 V, 1.3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)
INFINEON
晶体管, MOSFET, 通用, N沟道, 72 A, 55 V, 0.012 ohm, 10 V, 4 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.012 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.012 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -8.8 A, -20 V, 0.012 ohm, -4.5 V, -880 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.012 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 150 V, 0.012 ohm, 10 V, 5 V
(EN)VISHAY
场效应管, MOSFET, P沟道, TO-252-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.012 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 60 V, 12 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.012 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 0.012 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.012 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 78 A, 150 V, 12 mohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.012 ohm, -10 V, -2.5 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)
