规格：在电阻RDS（上） 0.023ohm,
INFINEON
场效应管, MOSFET, 双N沟道, 2W, 8-SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.9 A, 20 V, 0.023 ohm, 4.5 V, 400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.023 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.023 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.023 ohm, 10 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -32 A, -40 V, 0.023 ohm, -10 V, -1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)INFINEON
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 6.9 A, 30 V, 0.023 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道+P沟道, 12V, 4.5A, POWERPAK SC-70
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 12V, 4.5A, POWERPAK SC70-6
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.8 A, 20 V, 0.023 ohm, 4.5 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -12 V, 0.023 ohm, -4.5 V, 400 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, D-S, 20V, 7.9A, TSOP6
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.023 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 32 A, -40 V, 0.023 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 9A, TO-252, 整卷
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)
