规格：在电阻RDS（上） 0.024ohm,
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 6SON
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.6 A, -30 V, 0.024 ohm, -10 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.3 A, 80 V, 0.024 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.024 ohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 5A, 0.024OHM, SON-6
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 4.7 A, 20 V, 0.024 ohm, 4.5 V, 700 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.024 ohm, 4.5 V, 1 V
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 20V, 4.1A, TSSOP-8
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.024 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 19 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 0.024 ohm, 4.5 V, 600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 84 A, 650 V, 0.024 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.024 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 6.5 A, 60 V, 0.024 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, N沟道, 6.5 A, 60 V, 0.024 ohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 0.024 ohm, 4.5 V, 900 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6 A, -20 V, 0.024 ohm, -4.5 V, -800 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.024 ohm, -10 V, -2.5 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
