规格：在电阻RDS（上） 0.033ohm,
VISHAY
场效应管, MOSFET, P沟道, -100V, 28A, SOIC
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 20 V, 2.4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.033 ohm, -10 V, -3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.4 A, 20 V, 0.033 ohm, 4.5 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.033 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 60V, SOIC
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.033 ohm, -10 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -25 A, -60 V, 0.033 ohm, -10 V, -2.6 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 19.5 A, 60 V, 0.033 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.033 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 10 V, 2.4 V
(EN)VISHAY
场效应管, P沟道, MOSFET, -100V, 28A, SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.033 ohm, -10 V, -3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 300 V, 0.033 ohm, 10 V, 3.75 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.5 A, 30 V, 0.033 ohm, 4.5 V, 650 mV
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 54 A, 650 V, 0.033 ohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 83.2 A, 650 V, 0.033 ohm, 10 V, 3 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 7 A, 60 V, 0.033 ohm, 10 V, 2 V
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 86 A, 300 V, 0.033 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -100V, 28A, SOIC, 整卷
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4.5 A, 12 V, 0.033 ohm, 4.5 V, 400 mV
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 6 A, 45 V, 0.033 ohm, 10 V, 10 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.033 ohm, 10 V, 2.5 V
(EN)
