规格：在电阻RDS（上） 0.08ohm,
ROHM
功率场效应管, MOSFET, N沟道, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -12 V, 0.08 ohm, -4.5 V, -600 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 30 V, 80 mohm, 10 V, 2 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 30 V, 0.08 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2.8 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -3.7 A, -20 V, 0.08 ohm, -4.5 V, -600 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 2.8 A, 80 V, 0.08 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 2.8 A, 80 V, 0.08 ohm, 10 V, 1.7 V
(EN)
