规格：在电阻RDS（上） 0.11ohm,
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.11 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.5 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.11 ohm, 10 V, 4 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV
(EN)
RENESAS
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.11 ohm, -4.5 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.4 A, -30 V, 0.11 ohm, -4.5 V
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -3.1A, SOT-23-3
(EN)
