规格：在电阻RDS（上） 0.0135ohm,
VISHAY
晶体管, MOSFET, N沟道, 7.6 A, 80 V, 0.0135 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -39.6 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0135 ohm, -4.5 V, -500 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 80 V, 0.0135 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0135 ohm, 10 V, 1.66 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 30V, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 12 A, 30 V, 0.0135 ohm, 10 V, 800 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 80 V, 0.0135 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0135 ohm, 12 V, 1.8 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0135 ohm, 12 V, 1.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 7.6 A, 80 V, 0.0135 ohm, 10 V, 2 V
(EN)
