规格：在电阻RDS（上） 0.014ohm,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.014 ohm, -10 V, -1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 55 A, 60 V, 0.014 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.014 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.9 A, 80 V, 0.014 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -12V, 0.014OHM, -10A, MICROFET-6
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 38 A, 60 V, 0.014 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.014 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.014 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 79 A, 150 V, 0.014 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.4 A, -30 V, 0.014 ohm, -10 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 56 A, 100 V, 0.014 ohm, 10 V, 1.7 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 7.6 A, 12 V, 0.014 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.014 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 14 mohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.014 ohm, 10 V, 2.1 V
(EN)
VISHAY
MOSFET, N & P CHANNEL, 12V, 7.6A, POWERP
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.014 ohm, -4.5 V, -700 mV
(EN)
